This system is designed for deposition of boron nitride and carbon thin films. It is equipped with a 3-inch sputter gun, with capacity for two additional guns. The system includes a heated, rotating substrate holder capable of reaching 550 °C, MFCs for Ar and N₂, and an central computer control system.
CVD System
This system is designed for deposition of boron nitride thin film. It features a dual-zone heating system capable of reaching up to 1200 °C, mass flow controllers for Argon and Oxygen, and an integrated plasma generator.
Plasma Generator System
This system is designed to generate plasma for performing PECVD experiments. It is equipped with two induction coils of different sizes, a larger coil for producing more powerful plasma and a smaller coil for lower-power plasma generation.
CVD System
This system is designed for thin film deposition of graphene. It features a single-zone heater capable of reaching up to 1100 °C, along with mass flow controllers for Argon and Methane (CH₄) as the source of carbon.
Material Analysis Equipments
Probe Station (3 Probes)
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Probe Station with Hot Chuck and Optical Microscope
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IV and CV Impedance System
Solartron Impedance Analyzer equipped with a High-Impedance Dielectric Interface, offering high-temperature and vacuum testing capabilities.
Hall Effect Measurement System
Characterize semiconductor materials, determining carrier concentration, mobility, and type (N or P).
UV-Visible Spectrophotometer
The V-730 UV-visible spectrophotometer is designed to be simple to use with precise results, with 1 nm spectral bandwidth for high resolution and a linear dynamic range to over 3 AU across the entire spectrum. The wide wavelength range from 190 to 1100 nm offers versatile measurement for many different applications.
Optical Microscope
Capable of performing 5X, 10X, 40X and 50X magnifications.