Publications
Wide Bandgap Laboratory
| Year | Title | Authors | Link |
|---|---|---|---|
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2025 |
Carrier transport properties of a SiC metal insulator semiconductor Schottky diode with a boron nitride layer |
Ravi Ranjan Kumar, Shambel Abate Marye, Yao-Luen Shen, Chih-Fang Huang, Niall Tumilty |
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2025 |
Advanced Li–S Battery Configuration Featuring Sulfur‐Coated Separator and Interwoven rGO/CNT Fabric Current Collector (Small 8/2025) |
Kuan‐Cheng Chiu, Asif Latief Bhat, Ching‐Kuan Yang, Sheng‐Heng Chung, Niall Tumilty, Yu‐Sheng Su |
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2025 |
Advanced Li–S Battery Configuration Featuring Sulfur‐Coated Separator and Interwoven rGO/CNT Fabric Current Collector |
Kuan‐Cheng Chiu, Asif Latief Bhat, Ching‐Kuan Yang, Sheng‐Heng Chung, Niall Tumilty, Yu‐Sheng Su |
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2025 |
Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition |
Fu‐Gow Tarntair, Chih‐Yang Huang, Siddharth Rana, Kun‐Lin Lin, Shao‐Hui Hsu, Yu‐Cheng Kao, Singh Jitendra Pratap, Yi‐Che Chen, Niall Tumilty, Po‐Liang Liu, Ray‐Hua Horng |
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2024 |
A hBN/Ga2O3 pn junction diode |
Shambel Abate Marye, Xin-Ying Tsai, Ravi Ranjan Kumar, Fu-Gow Tarntair, Ray Hua Horng, Niall Tumilty |
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2024 |
Electrical properties and evaluation of band tail states in Mg doped p-type multilayer hBN |
Shambel Abate Marye, Ravi Ranjan Kumar, Le Thi Phuong Thao, Chin-Han Chung, Niall Tumilty |
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2024 |
Performance Improvement of Enhanced-Mode β-Ga2O3 MOSFETs by Partial Gate Recess Structure |
Yueh-Han Chuang, Fu-Gow Tarntair, Pei-Jung Wang, Tian-Li Wu, Niall Tumilty, Ray-Hua Horng |
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2024 |
Comparison of performance in GaN-HEMTs on thin SiC substrate and sapphire substrates |
Tsung Po Chuang, Niall Tumilty, Chia Hao Yu, Ray Hua Horng |
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2024 |
Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies |
Chih-Yang Huang, Xin-Ying Tsai, Fu-Gow Tarntair, Catherine Langpoklakpam, Thien Sao Ngo, Pei-Jung Wang, Yu-Cheng Kao, Yi-Kai Hsiao, Niall Tumilty, Hao-Chung Kuo, Tian-Li Wu, Ching-Lien Hsiao, Ray-Hua Horng |
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2024 |
Undoped β-Ga2O3 layer thickness effect on performance of MOSFETs grown on sapphire substrate |
Ray-Hua Horng, Chan-Hung Lu, Fu-Gow Tairtan, Yu-Cheng Kao, Niall Tumilty |
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2024 |
Undoped β-Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate |
Chan-Hung Lu, Fu-Gow Tarntair, Yu-Cheng Kao, Niall Tumilty, Ray-Hua Horng |
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2024 |
Material Properties of n-Type 𝜷-Ga |
Fu-Gow Tarntair, Chih-Yang Huang, Siddharth Rana, Kun-Lin Lin, Shao-Hui Hsu, Yu-Cheng Kao, Singh Jitendra Pratap, Yi-Che Chen, Niall Tumilty, Po-Liang Liu, Ray-Hua Horng |
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2024 |
Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films |
Shambel Abate Marye, Ravi Ranjan Kumar, Artur Useinov, Niall Tumilty |
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2023 |
β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD |
Chan-Hung Lu, Fu-Gow Tarntair, Yu-Cheng Kao, Niall Tumilty, Jia-Min Shieh, Shao-Hui Hsu, Ching-Lien Hsiao, Ray-Hua Horng |
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2023 |
Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition |
Ray-Hua Horng, Apoorva Sood, Siddharth Rana, Niall Tumilty, Fu-Gow Tarntair, Catherine Langpoklakpam, Hao-Chung Kuo, Jitendra Pratap Singh |
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2023 |
Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates |
Ray-Hua Horng, Hsiao-Yun Yeh, Niall Tumilty |
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2023 |
Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates |
Apoorva Sood, Dong-Sing Wuu, Fu-Gow Tarntair, Ngo Thien Sao, Tian-Li Wu, Niall Tumilty, Hao-Chung Kuo, Singh Jitendra Pratap, Ray-Hua Horng |
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2022 |
AC conductivity of hBN thin film on Si (111): A high temperature study |
Hao Le Thi, Shambel Abate Marye, Niall Tumilty |
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2014 |
Observation of multiple conduction paths in boron δ-doped diamond structures |
Niall Tumilty, Alex Pakpour-Tabrizi, Richard B Jackman, Richard Lang |
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2010 |
Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation |
Rezal K Ahmad, Ana Carolina Parada, Niall Tumilty, Richard B Jackman |
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2010 |
Synthesis of carbon nanotubes on single crystal diamond |
Niall Tumilty, Lesya Kasharina, Tatiana Prokhoda, Boris Sinelnikov, Richard B Jackman |
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2010 |
Diamond based nanostructures for electronic applications |
Niall James Tumilty |
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2010 |
Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study |
Mose Bevilacqua, Niall Tumilty, Chiranjib Mitra, Haitao Ye, Tatayana Feygelson, James E Butler, Richard B Jackman |
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2009 |
An impedance spectroscopic investigation of the electrical properties of δ-doped diamond structures |
Niall Tumilty, Joseph Welch, Richard Lang, Christopher Wort, Richard Balmer, Richard B Jackman |
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2009 |
Multiple conduction paths in boron δ-doped diamond structures |
Niall Tumilty, Joseph Welch, Haitao Ye, Richard S Balmer, Christopher Wort, Richard Lang, Richard B Jackman |
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2008 |
Nanocrystalline diamond as a dielectric for SOD applications |
Mose Bevilacqua, Niall Tumilty, Aysha Chaudhary, Haitao Ye, James E Butler, Richard B Jackman |
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2008 |
Electronic properties of homoepitaxial (111) highly boron-doped diamond films |
Haitao Ye, Niall Tumilty, Mose Bevilacqua, Stephane Curat, Milos Nesladek, Bertrand Bazin, Philippe Bergonzo, Richard B Jackman |
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2006 |
Device simulation and design optimization for diamond based insulated-gate bipolar transistors |
Haitao Ye, Niall Tumilty, David Garner, Richard B Jackman |
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2006 |
Carrier Transport in Delta-doped Diamond Layers |
N Tumilty, RB Jackman |